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| Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit: mm s Features q 13.00.2 4.20.2 5.00.1 10.00.2 1.0 q High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping (TC=25C) 90 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 2.50.2 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip Ratings -60 -60 -20 -8 -4 -2 15 2 150 -55 to +150 Unit V V V A A A W C C 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 C1.0 123 2.50.2 2.50.2 1:Base 2:Collector 3:Emitter MT4 Type Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO ICEO IEBO VCEO hFE1* hFE2 VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -60V, IE = 0 VCE = -50V, IB = 0 VEB = -15V, IC = 0 IC = -10mA, IB = 0 VCE = -4V, IC = - 0.8A VCE = -4V, IC = -2A IC = -2A, IB = -100mA IC = -2A, IB = -100mA VCE = -10V, IC = - 0.5A, f = 1MHz IC = -2A, IB1 = -100mA, IB2 = 100mA, VCC = -50V 25 0.4 0.6 0.25 -60 80 30 -1.0 -1.5 V V MHz s s s 400 min typ max -10 -50 -10 Unit A A A V FE1 Rank classification Q 80 to 160 P 120 to 240 O 200 to 400 Rank hFE1 1 Power Transistors PC -- Ta 20 -4.0 (1) TC=Ta (2) Without heat sink (PC=2.0W) 15 TC=25C -3.5 IB=-50mA -45mA -40mA -35mA -30mA -2.5 -2.0 -1.5 -1.0 -5mA -25mA -20mA -15mA -10mA 2SB1554 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=20 -30 -10 -3 -1 VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) -3.0 (1) 10 - 0.3 - 0.1 - 0.03 TC=100C 25C -25C 5 (2) 0 0 20 40 60 80 100 120 140 160 - 0.5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 105 IC/IB=20 -30 -10 -3 -1 TC=-25C 25C 100C hFE -- IC 1000 VCE=-4V 300 100 30 10 3 1 0.3 1 - 0.001 fT -- IC VCE=-10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 104 103 TC=100C 102 -25C 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 10 Transition frequency fT (MHz) -10 -1 -3 -10 - 0.01 - 0.1 -1 0.1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 104 100 IE=0 f=1MHz TC=25C 103 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=20 (-IB1=IB2) VCC=-50V TC=25C Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 ton 0.3 tf 0.1 0.03 tstg -10 -3 -1 ICP t=1ms IC 10ms DC 102 - 0.3 - 0.1 - 0.03 - 0.01 -1 10 1 - 0.1 - 0.3 0.01 -1 -3 -10 -30 -100 0 -1 -2 -3 -4 -5 -3 -10 -30 -100 -300 -1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink 2SB1554 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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